QPD1025L

Overview

The QPD1025L is a dual-channel, discrete Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) designed for L-band applications. It delivers an output power of 1800 W and utilizes a leadless NI-1230 package identical to the QPD1025. The component provides high signal integrity and extended range capabilities, making it suitable for demanding RF environments.

Feature Summary

• Dual-channel GaN-on-SiC HEMT architecture
• Leadless NI-1230 package design
• Optimized for L-band frequency operations

Applications

• L-band avionics systems
• Identification Friend or Foe (IFF) applications

Part Context

This device belongs to Qorvo's portfolio of high-power RF transistors showcased at industry events such as the IMS exhibition. It shares the same physical packaging form factor as the QPD1025 model while offering specific performance characteristics tailored for L-band requirements.

Replacement Considerations

The QPD1025 utilizes the identical NI-1230 leadless package. Verification of electrical parameter compatibility is required before substitution.