QPD1026L

Overview

The QPD1026L is a Gallium Nitride (GaN) Radio Frequency Input-Matched Transistor manufactured by Qorvo. It is engineered for high-power applications within the 1.2 GHz to 1.4 GHz frequency range. The device operates with a drain voltage of 50V and delivers an output power capability of 450W. This component utilizes GaN on Silicon Carbide technology to achieve high efficiency and linearity in demanding RF environments.

Feature Summary

• Integrated input matching network simplifies circuit design
• High power density using GaN on SiC technology
• Optimized for broadband RF power amplification

Applications

• Base station power amplifiers
• Broadband RF transmitter modules
• Military communication systems

Part Context

The QPD1026L belongs to Qorvo's portfolio of GaN RF input-matched transistors designed for infrastructure. It shares architectural similarities with other devices in the QPD series, such as the QPD1003 and QPD1017, which also target high-power RF applications but differ in specific frequency bands and power ratings.