QPD1028

Overview

The QPD1028 is a discrete Gallium Nitride on Silicon Carbide High Electron Mobility Transistor designed for high-power RF applications. It operates within the 1.2 to 1.4 GHz frequency range and supports a maximum drain voltage of 65 V. The device delivers a saturated output power of 59 dBm with an associated gain of 18 dB at P3dB compression point of 750 W. It features integrated input pre-matching to simplify external circuit design. The component is rated for a minimum operating temperature of -40 °C and a maximum of +85 °C, ensuring reliability in demanding environments.

Feature Summary

• Discrete GaN on SiC HEMT technology for high-power performance
• Integrated input pre-matching network within the package
• High efficiency operation with 18 dB gain at saturation
• Robust thermal and electrical ratings for continuous wave applications

Applications

• Military radar systems
• Electronic warfare equipment
• Communications infrastructure amplifiers

Procurement Notes

Verify the specific datasheet revision and mechanical drawing dimensions prior to integration. Confirm that the application environment remains within the specified -40 °C to +85 °C operational temperature range. Ensure proper thermal management solutions are implemented to handle the high power dissipation characteristics inherent to this class of devices.

Selection Notes

Select this component when designing amplifiers requiring high linearity and power density in the 1.2–1.4 GHz band. The built-in input matching reduces external component count and layout complexity compared to unmatched transistors. Evaluate thermal resistance requirements carefully to maintain junction temperatures within safe limits during peak operation.

Part Context

This part belongs to Qorvo's portfolio of wide-bandgap semiconductor devices. It utilizes advanced GaN-on-SiC material properties to achieve superior breakdown voltage and electron mobility compared to traditional silicon-based RF components. The discrete form factor allows designers flexibility in creating custom amplifier stages tailored to specific system impedance and power requirements.

Replacement Considerations

No direct public substitute part numbers are confirmed in available documentation. Designers must evaluate alternative GaN transistors based on matching frequency ranges, power output levels, and thermal specifications if sourcing constraints exist.