QPD1035L

Overview

The Qorvo QPD1035L is a discrete silicon carbide-based gallium nitride high electron mobility transistor (HEMT) designed for broadband radio frequency power amplification. It operates from DC to 6 GHz and utilizes a 50V supply voltage. The device features input pre-matching, facilitating integration into both pulsed and continuous wave amplifier architectures. Key electrical specifications include a saturated output power of 50W at the 3dB compression point, a linear gain of 15.1dB, and a drain efficiency of 52.2% under P3dB conditions. The component is housed in a low thermal resistance package and complies with RoHS directives.

Feature Summary

• Silicon carbide substrate GaN HEMT technology
• Input pre-matching for simplified circuit design
• Low thermal resistance packaging

Applications

• Military radar systems
• Civilian radar applications
• Professional and military radio communications
• Test and measurement instrumentation
• Broadband or narrowband amplifiers

Procurement Notes

Verify the specific suffix 'L' against official Qorvo documentation to confirm if it denotes a distinct tape-and-reel variant or a specific qualification grade compared to the standard QPD1035. Ensure that any ordering suffix does not alter the functional parameters unless explicitly stated in the datasheet. Confirm RoHS compliance status directly from the manufacturer's current product specification sheet prior to procurement.

Selection Notes

Select this component for designs requiring wide bandwidth operation up to 6 GHz with high linearity. The integrated input matching network reduces external component count and simplifies impedance matching requirements. Evaluate the thermal management capabilities of the PCB layout to accommodate the device's power dissipation characteristics effectively during continuous wave operation.

Part Context

This device belongs to Qorvo's portfolio of silicon carbide-based GaN RF power transistors. These components are engineered to deliver high power density and efficiency across broad frequency ranges. The QPD1035 series specifically targets applications demanding robust performance in demanding RF environments, leveraging advanced semiconductor materials for superior reliability.

Replacement Considerations

Publicly confirmed substitute part numbers for the QPD1035L are not available in the provided reference data. Verify compatibility with existing board layouts and biasing networks when considering alternative devices from other manufacturers.