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The Qorvo QPD2018D is a discrete GaAs pHEMT die utilizing a verified 0.25um power pHEMT process. It operates from DC to 20GHz, delivering typical performance metrics of 22dBm output power at P1dB, 14dB gain, and 55% Power Added Efficiency (PAE) at 12GHz. The device features a noise figure of 1dB at 12GHz and employs a silicon nitride passivation layer for environmental robustness. Its via-free design supports high-frequency applications requiring efficient microwave power generation.
Verify the specific datasheet revision and electrical test conditions provided by authorized distributors or Qorvo directly. Ensure compatibility with your RF layout requirements regarding the bare die format and thermal management strategies for the specified package dimensions.
Select this component for designs requiring operation up to 20GHz with high efficiency. Consider the 0.41mm x 0.34mm chip size for space-constrained layouts. Verify that the application can support the required bias conditions for optimal PAE and gain performance within the target frequency band.
This part belongs to Qorvo's portfolio of discrete GaAs pHEMT devices designed for defense and aerospace markets. It complements other high-power amplifiers in their catalog, supporting advanced radar and communication infrastructure where size, weight, and power efficiency are critical constraints.
No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative Qorvo discrete pHEMT dies based on matching frequency ranges, power output requirements, and process technology nodes.