QPD2080D

Overview

The Qorvo QPD2080D is a discrete Gallium Arsenide (GaAs) High Electron Mobility Transistor (HEMT) with an active gate width of 800 micrometers. Designed for high-power radio frequency applications, this component delivers an output power of 29.5 dBm at the 1 dB compression point (P1dB). It provides a small-signal gain of 11.5 dB and achieves a Power Added Efficiency (PAE) of 56% under P1dB conditions. The device utilizes Qorvo’s standard 0.25-micron power HEMT process technology to ensure performance consistency and reliability in demanding RF environments.

Feature Summary

• High-efficiency power amplification utilizing advanced GaAs HEMT technology
• Optimized for linear operation with defined P1dB output characteristics
• Standardized 0.25-micron process for manufacturing consistency

Applications

• Wireless infrastructure power amplification
• Point-to-point microwave communication links
• Broadband RF signal generation systems

Procurement Notes

Verify the specific manufacturer part number against official Qorvo documentation to confirm the 800-micrometer gate width and associated electrical parameters. Ensure that the procurement source provides authentic components with traceable manufacturing data. Cross-reference the datasheet specifications for the exact operating conditions required to achieve the stated 29.5 dBm output power and 56% efficiency metrics.

Selection Notes

Select the QPD2080D when an 800-micrometer gate width is required for specific power and gain targets. Compare its 11.5 dB gain and 56% PAE against other discrete options in the family to determine suitability for the intended frequency band. Consider thermal management requirements based on the power dissipation inherent to achieving 29.5 dBm output in a discrete package configuration.

Part Context

This component belongs to Qorvo’s portfolio of discrete GaAs pHEMT devices, which are engineered for robust RF performance. The product line leverages a standardized 0.25-micron process to offer various gate widths, allowing designers to scale power output and gain characteristics. The QPD2080D represents a mid-range option within this series, balancing output power with efficiency for specific amplifier topologies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference material. Evaluate other discrete GaAs HEMTs from the same manufacturer family with similar gate widths if direct substitution is necessary.