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The QS6M4TR is a complementary MOSFET pair designed for low-voltage drive applications, specifically optimized for operation at a gate-source voltage of 2.5V. It integrates an N-channel and a P-channel MOSFET within a single SOT-457T package. The device supports a drain-source voltage (V_DSS) of 30V and provides a continuous drain current (I_D) of 1.5A. At V_GS = 2.5V, the typical on-resistance (R_DS(on)) is 0.26Ω, reducing to 0.18Ω at V_GS = 4V. Key electrical parameters include a total gate charge (Q_G) of 1.6nC and a power dissipation (P_D) of 1.25W. The component operates within a temperature range of -55°C to 150°C.
Verify supply status carefully as this component is marked as not recommended for new designs. Confirm that the specific suffix TR indicates tape-and-reel packaging if required for automated assembly. Ensure compatibility with existing design constraints before procurement, as replacement sourcing may require qualification efforts.
Select this component when a small form factor complementary MOSFET pair is needed for low-voltage logic interfaces or synchronous rectification at 2.5V. Compare R_DS(on) values at 2.5V against alternative packages like US6M2 if higher current capacity is required. Verify thermal management requirements given the 1.25W power dissipation limit in the SOT-457T package.
The QS6M4 series belongs to ROHM's lineup of complementary MOSFETs designed for portable electronics and communication devices. It serves as a discrete solution for driving loads where space is limited and low control voltage compatibility is essential. The part is often paired with NFC controllers in reference designs for wireless power transfer applications.
The US6M2 is listed as a similar specification part, though it utilizes a different DFN2020-8D package and offers higher current ratings. Designers must account for pinout differences and thermal performance variations when substituting.