QS6M4TR

QS6M4TR

$0.82
  • Description:MOSFET N/P-CH 30V/20V 1.5A TSMT6
  • Series:-

SKU:0bc296333eea Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V/20V 1.5A TSMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V, 20V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:230mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:80pF @ 10V
  • Power - Max:1.25W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSMT6 (SC-95)
  • Grade:-
  • Qualification:-

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QS6M4TR

Overview

The QS6M4TR is a complementary MOSFET pair designed for low-voltage drive applications, specifically optimized for operation at a gate-source voltage of 2.5V. It integrates an N-channel and a P-channel MOSFET within a single SOT-457T package. The device supports a drain-source voltage (V_DSS) of 30V and provides a continuous drain current (I_D) of 1.5A. At V_GS = 2.5V, the typical on-resistance (R_DS(on)) is 0.26Ω, reducing to 0.18Ω at V_GS = 4V. Key electrical parameters include a total gate charge (Q_G) of 1.6nC and a power dissipation (P_D) of 1.25W. The component operates within a temperature range of -55°C to 150°C.

Feature Summary

  • Optimized for 2.5V drive voltage applications
  • Complementary N+P channel configuration in a compact surface-mount package
  • Fast switching speed capabilities
  • Lead-free construction compliant with RoHS standards

Applications

  • Compact NFC wireless charging transmitters
  • NFC telemetry-based rotating component torque sensing systems
  • Low-power DC-DC converter output stages

Procurement Notes

Verify supply status carefully as this component is marked as not recommended for new designs. Confirm that the specific suffix TR indicates tape-and-reel packaging if required for automated assembly. Ensure compatibility with existing design constraints before procurement, as replacement sourcing may require qualification efforts.

Selection Notes

Select this component when a small form factor complementary MOSFET pair is needed for low-voltage logic interfaces or synchronous rectification at 2.5V. Compare R_DS(on) values at 2.5V against alternative packages like US6M2 if higher current capacity is required. Verify thermal management requirements given the 1.25W power dissipation limit in the SOT-457T package.

Part Context

The QS6M4 series belongs to ROHM's lineup of complementary MOSFETs designed for portable electronics and communication devices. It serves as a discrete solution for driving loads where space is limited and low control voltage compatibility is essential. The part is often paired with NFC controllers in reference designs for wireless power transfer applications.

Replacement Considerations

The US6M2 is listed as a similar specification part, though it utilizes a different DFN2020-8D package and offers higher current ratings. Designers must account for pinout differences and thermal performance variations when substituting.

QS6M4TRQS6M4TR
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