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Product Detailed Parameters
- Description：3300v 800amp IGBT
- Series：-
- Mfr：Quest Semi
- Package：Bag
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：1500 A
- Power - Max：9.62 kW
- Current - Collector Cutoff (Max)：12 mA
- Input Capacitance (Cies) @ Vce：125000 pF @ 25 V
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Overview
The Quest Semi QS800SGL330A3S is a 3300V/800A IGBT power module utilizing low VCE(sat) SPT technology. It features an AlSiC baseplate and AlN substrate for high power cycling capability and low thermal resistance. Key electrical parameters include a collector-emitter voltage of 3300V, continuous collector current of 800A at Tc=100°C, and a maximum junction temperature of 150°C. The module supports 10μs short circuit capability with a peak short-circuit current of 3300A. Isolation voltage is 6000V RMS. Operating junction temperature ranges from -40°C to +125°C.
Feature Summary
- Low VCE(sat) SPT IGBT technology
- AlSiC baseplate for high power cycling capability
- AlN substrate for low thermal resistance
- High reliability package
Applications
- High Power Converter
- Wind Power
- Traction Drive
Procurement Notes
Verify the specific datasheet version (Ver 1.0) against the manufacturer's official documentation before finalizing system designs. Confirm that the plastic package marking 'Q' matches the intended component identification. Ensure all mechanical mounting torque specifications are strictly adhered to during installation to maintain the rated isolation voltage and thermal performance characteristics.
Selection Notes
Select this module for applications requiring high voltage blocking capabilities up to 3300V and robust current handling. The positive temperature coefficient of VCE(sat) facilitates safer paralleling operations. Consider the 10μs short circuit withstand time when designing protection circuits. Evaluate the thermal impedance values to ensure adequate heatsinking for the intended duty cycle and ambient conditions.
Part Context
This component belongs to the Queensland Semiconductor Technologies Ltd IGBT power module portfolio. It is designed for industrial and renewable energy sectors where high efficiency and reliability are critical. The module integrates both IGBT and diode chips within a single insulated package, simplifying assembly compared to discrete solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires matching voltage, current, and thermal specifications with alternative manufacturers' datasheets.
