QS8J12TCR

Overview

The QS8J12TCR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSMT-8 surface-mount package with eight terminals. The device supports a drain-source voltage of -12 V and a continuous drain current of -4.5 A. At a gate-source voltage of 1.5 V, the typical on-resistance is 0.049 Ω, decreasing to 0.027 Ω at 2.5 V and 0.021 Ω at 4.5 V. Total gate charge is 40 nC, with power dissipation rated at 1.5 W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Low voltage drive capability optimized for 1.5 V operation
• Dual P-channel configuration in a compact TSMT-8 package
• RoHS compliant and lead-free construction

Applications

• General switching circuits
• Low voltage power management systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notifications, as this part may be subject to discontinuation. Ensure storage conditions remain within specified limits to maintain reliability before installation.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage logic interfaces. The TSMT-8 package suits space-constrained designs. Evaluate thermal performance against the 1.5 W dissipation limit and ensure gate drive voltages align with the specified thresholds for optimal on-resistance characteristics.

Part Context

This component belongs to ROHM's series of small-signal MOSFETs tailored for portable and automotive electronics. The QS8J12TCR specifically addresses the need for efficient switching in low-voltage environments, offering a balance between conduction loss and drive simplicity within a standard surface-mount footprint.

Replacement Considerations

No public confirmed substitute part numbers are available.