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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：36mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1940pF @ 6V
- Power - Max：550mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QS8J2TR is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features an 8-terminal TSMT-8 surface-mount package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of -12 V and a continuous drain current (I_D) of -4 A. Typical on-resistance (R_DS(on)) values are 0.066 Ω at V_GS = 1.5 V, 0.036 Ω at V_GS = 2.5 V, and 0.026 Ω at V_GS = 4.5 V. The total gate charge (Q_g) is 20 nC, with a power dissipation (P_D) of 1.5 W. It operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Low voltage drive capability optimized for 1.5 V operation
- Dual P-channel configuration in a compact surface-mount package
- Fast switching performance suitable for power supply applications
Applications
- Power supply circuits
- Low voltage drive systems
Procurement Notes
Verify the specific ordering suffix required for tape-and-reel packaging, as the base part number may denote bulk or different packaging configurations. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability and production statuses can change without notice. Ensure the selected variant matches the required package code and terminal count for your PCB layout.
Selection Notes
Select this component when a dual P-channel MOSFET with low gate drive voltage requirements is needed. The 1.5 V drive specification makes it suitable for logic-level control from low-voltage microcontrollers. Consider the 0.066 Ω R_DS(on) at 1.5 V for efficiency calculations. The TSMT-8 package offers a balance between thermal performance and space constraints compared to larger packages.
Part Context
The QS8J2TR belongs to ROHM's series of dual P-channel MOSFETs designed for portable and battery-powered devices. It shares the TSMT-8 package form factor with other low-profile components in the lineup but is distinguished by its specific 1.5 V drive optimization and -12 V voltage rating. This places it between higher-voltage general-purpose MOSFETs and ultra-low voltage specialized variants.
Replacement Considerations
Check for pin-compatible alternatives if the QS8J2TR is unavailable. Verify that any substitute maintains the same TSMT-8 package, 8 terminals, and similar R_DS(on) characteristics at 1.5 V drive to ensure circuit compatibility.
