QS8J4TR

Overview

The QS8J4TR is a dual P-channel small signal MOSFET manufactured by Rohm Semiconductor. It features a drain-source voltage (V_DSS) of -30V and a continuous drain current (I_D) of -4.0A. The typical on-resistance (R_DS(on)) is 0.06Ω at a drive voltage of 4V or 4.5V. The device has a total gate charge (Q_g) of approximately 1nC and supports a power dissipation of up to 1.25W. It is housed in an TSMT8 package with dimensions of 2.8x3.0mm and a thickness of 0.85mm. The component operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Dual P-channel configuration for efficient switching applications
• Low on-resistance optimized for low-voltage drive conditions
• Compact surface-mount packaging suitable for space-constrained designs

Applications

• Power supply circuits
• Motor driver interfaces
• Load switching applications

Procurement Notes

Verify the specific ordering suffix, as the standard part number QS8J4FR may correspond to tape-and-reel packaging while other suffixes indicate different packing types. Confirm RoHS compliance status and check for any end-of-life notifications or last-time-buy recommendations directly from the manufacturer's official documentation before placing orders.

Selection Notes

Select this component when a dual P-channel solution is required with a -30V rating and high current capability. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance. Verify that the thermal management design accommodates the power dissipation limits within the operating temperature range.

Part Context

This component belongs to Rohm Semiconductor's lineup of small signal MOSFETs designed for general-purpose switching. It serves as a replacement for older discrete P-channel solutions, offering integrated dual functionality in a single compact package to reduce board space and assembly complexity.

Replacement Considerations

The QS8J4HZG is listed as a similar level part with the same pinout and package. Verify electrical parameter compatibility and ensure the substitute meets all original design requirements before implementation.