QS8J5TR

Overview

The QS8J5TR is a dual P-channel MOSFET array manufactured by ROHM Semiconductor, housed in a TSMT8 surface-mount package. It features a drain-source voltage rating of 30V and a continuous drain current capacity of 5A. The device supports an impulse drain current of 20A with a maximum power dissipation of 1.5W. Key electrical characteristics include a rise time of 40 ns and a fall time of 55 ns, alongside a minimum forward transconductance of 3 S. The component operates within a standard temperature range suitable for general electronic applications.

Feature Summary

• Dual P-channel configuration integrated into a single compact package
• High continuous drain current capability of 5A per channel
• Fast switching performance with specified rise and fall times
• Low on-resistance design for efficient power management

Applications

• Battery protection circuits
• Load switch applications
• Power management units
• Motor control interfaces

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status prior to procurement. Confirm that the TSMT8 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 1.5W power dissipation limit under expected operating conditions. Cross-reference the manufacturer's latest reliability data to confirm suitability for the intended environmental requirements.

Selection Notes

Select this component when a dual P-channel solution is required for space-constrained designs. The 30V rating suits low-voltage systems, while the 5A current handling supports moderate load demands. Consider the TSMT8 package for automated assembly processes. Evaluate the trade-off between the 1.5W power dissipation and available thermal relief on the circuit board to ensure reliable long-term operation.

Part Context

This part belongs to ROHM's discrete transistor lineup, specifically designed as a complementary pair or independent dual switches. The TSMT8 package provides a small form factor compared to traditional dual packages, facilitating high-density layout. It serves as a building block for power distribution networks requiring isolated or synchronized control of two P-channel paths.

Replacement Considerations

The QH8K51 is listed as a similar level replacement with the same pinout and package, though it is a dual N-channel device. Direct substitution requires verifying polarity compatibility and threshold voltage alignment with the original circuit design.