QS8K2TR

Overview

The QS8K2TR is a dual N-channel silicon MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a TSMT-8 surface-mount package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 3.5 A. Typical on-resistance (R_DS(on)) values are 0.055 Ω at 2.5 V gate drive, 0.04 Ω at 4 V, and 0.038 Ω at 4.5 V. The total gate charge (Q_g) is typically 4.6 nC, with a power dissipation rating of 1.5 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Optimized for 2.5 V drive voltage operation
• Dual N-channel configuration in a compact surface-mount package
• Fast switching speed capabilities
• Automotive grade reliability compliant with AEC-Q101 standards

Applications

• Automotive electronic control units requiring low-side switching
• Power management circuits in mobile devices
• General-purpose load switching applications

Procurement Notes

Verify the specific ordering suffix TR to confirm tape-and-reel packaging containing 3000 units per reel. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the component meets automotive qualification requirements if used in safety-critical systems. Check for any end-of-life notifications or last-time-buy statuses that may affect long-term supply chain stability.

Selection Notes

Select this component when a dual N-channel MOSFET with low gate charge and fast switching is required for 2.5 V logic interfaces. Compare R_DS(on) performance at specific gate voltages against alternative packages like TSMT-6 if pin count constraints exist. Evaluate thermal dissipation capabilities relative to the 1.5 W power rating in the intended PCB layout environment.

Part Context

The QS8K2TR belongs to ROHM's series of small-signal MOSFETs optimized for automotive and industrial applications. It serves as a replacement for older discrete solutions, offering integrated dual channels in a single compact footprint. The TSMT-8 package provides efficient thermal performance while minimizing board space consumption compared to larger transistor arrays.

Replacement Considerations

The RQ6E035TN is a recommended replacement with similar electrical characteristics but utilizes a TSMT-6 (SOT-457T) package with 6 terminals instead of 8. Verify pinout compatibility before substitution, as the terminal count and physical dimensions differ between the TSMT-8 and TSMT-6 packages.