QS8M12TCR

Overview

The QS8M12TCR is a dual MOSFET component manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel silicon transistor within a TSMT-8 surface-mount package. The device supports low-voltage drive applications with a specified gate-source voltage of ±20 V. Key electrical parameters include a drain-source breakdown voltage of ±30 V and a continuous drain current rating of ±4 A. The typical static drain-source on-state resistance is 45 mΩ for the N-channel at VGS=4V and 60 mΩ for the P-channel at VGS=-4V. Total gate charge values are 3.4 nC for the N-channel and 8.4 nC for the P-channel. Power dissipation is rated at 1.5 W total, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Low on-resistance design optimized for efficient switching performance.
• High power handling capability provided by the TSMT-8 package structure.
• Compatible with low voltage drive circuits requiring 4V operation levels.

Applications

• Switching

Procurement Notes

Verify the specific ordering suffix TCR against official documentation to confirm taping specifications and basic ordering unit quantities. Ensure that the selected variant matches the required packaging format for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to confirm all absolute maximum ratings and electrical characteristics prior to final procurement decisions.

Selection Notes

Select this component based on the requirement for a complementary N-channel and P-channel pair in a single compact package. Evaluate the 45 mΩ and 60 mΩ on-state resistances against the target load current requirements. Confirm compatibility with the 4V drive voltage level and ensure the thermal management strategy accommodates the 1.5 W total power dissipation limit within the specified ambient temperature range.

Part Context

The QS8M12 belongs to the QS8 series of 4V drive complementary MOSFETs produced by ROHM Semiconductor. This series is designed to provide integrated switching solutions for low-voltage applications. The TSMT-8 package offers a small footprint suitable for space-constrained designs while maintaining adequate thermal performance for general-purpose switching tasks.

Replacement Considerations

The QH8MA2 is documented as a similar level replacement part with the same pinout and package configuration. Verify electrical parameter alignment before substitution.

FAQ

What is the typical static drain-source on-state resistance for the N-channel at 4V drive?

The typical RDS(on) for the N-channel is 45 mΩ when measured at a drain current of 4A and a gate-source voltage of 4V.

Does the QS8M12TCR include internal protection diodes?

Yes, the component includes body diodes for both the N-channel and P-channel transistors, as indicated by the inner circuit diagram and source-drain characteristics.

What is the maximum safe operating area limitation?

Operation in the maximum safe operating area is limited by the RDS(on) characteristic, particularly under DC and long pulse width conditions.