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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 2A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta), 1.5A (Ta)
- Rds On (Max) @ Id, Vgs：325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.7nC @ 5V, 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V, 950pF @ 25V
- Power - Max：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The QS8M51HZGTR is a complementary small-signal MOSFET designed for switching applications, featuring an N-channel and P-channel configuration within a single TSMT8 package. It meets the AEC-Q101 standard for automotive-grade high reliability. The device operates with a drain-source voltage of 100V and offers low on-resistance values ranging from 0.24Ω to 0.26Ω depending on gate drive conditions. Key electrical parameters include a total gate charge of 4.7nC and power dissipation of 1.5W. It supports surface mount mounting with a storage temperature range of -55°C to 150°C.
Feature Summary
- Complementary N+P polarity configuration in a compact TSMT8 package
- AEC-Q101 qualified for automotive grade high reliability
- Low on-resistance optimized for efficient switching performance
Applications
- Automotive switching circuits
- General purpose power management
- High reliability electronic systems
Procurement Notes
Verify the specific ordering suffix to confirm tape and reel packaging quantities. Ensure the component matches the required automotive qualification standards for your design. Check for any upcoming product change notices that may affect long-term availability or specifications before finalizing procurement plans.
Selection Notes
Select this component when a complementary N-P MOSFET pair is required in a minimal footprint. The 100V rating suits medium-voltage switching needs. Consider the TSMT8 package dimensions for PCB layout constraints. Verify gate drive compatibility with the specified Rds(on) test conditions to ensure optimal efficiency.
Part Context
This part belongs to ROHM's lineup of complementary small-signal MOSFETs. It is specifically engineered for applications requiring both N-channel and P-channel switching capabilities in a single package. The TSMT8 form factor allows for space-saving designs in dense circuit boards.
Replacement Considerations
Check for direct pin-compatible alternatives if supply is constrained. Ensure any substitute maintains the 100V Vdss rating and similar Rds(on) characteristics. Verify that replacement packages match the TSMT8 footprint and thermal requirements.
