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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 2A/1.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A, 1.5A
- Rds On (Max) @ Id, Vgs：325mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V, 950pF @ 25V
- Power - Max：1.5W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QS8M51TR is a dual N-channel small-signal MOSFET manufactured by ROHM Semiconductor, designed for switching applications. It features a TSMT-8 surface-mount package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 2.0 A. Typical on-resistance (R_DS(on)) values are 0.26 Ω at V_GS = 4 V, 0.25 Ω at V_GS = 4.5 V, and 0.24 Ω at V_GS = 10 V. The total gate charge (Q_g) is typically 4.7 nC, with a power dissipation (P_D) rating of 1.5 W. It operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration optimized for motor drive applications
- Low on-resistance characteristics for efficient switching performance
- Compact TSMT-8 surface mount package design
Applications
- Motor driver circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to ensure correct packaging and quantity specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure the component meets all environmental and operational requirements for the intended application.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET with low on-resistance in a compact surface-mount package. Consider the 100 V drain-source voltage and 2.0 A current ratings when sizing for load requirements. Evaluate thermal management needs based on the 1.5 W power dissipation capability in the TSMT-8 package.
Part Context
The QS8M51TR belongs to ROHM's series of dual MOSFETs developed for motor driving applications. It utilizes a newly developed back-side heat dissipation package structure to enhance thermal performance. This series is characterized by low on-resistance and small footprint, making it suitable for space-constrained electronic designs requiring efficient power switching.
Replacement Considerations
The QH8K51 is identified as a similar level part with the same pinout and package. Verify compatibility regarding electrical parameters and supply status before substitution.
