R6061YNXC7G

$4.39

Description：NCH 600V 26A, TO-220FM, POWER MO
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:34651648e483 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

R6061YNXC7G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 600V 26A, TO-220FM, POWER MO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for R6061YNXC7G

Description：NCH 600V 26A, TO-220FM, POWER MO
Series：-
Mfr：Rohm Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V, 12V
Rds On (Max) @ Id, Vgs：60mOhm @ 13A, 12V
Vgs(th) (Max) @ Id：6V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3700 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for R6061YNXC7G

R6061YNXC7G

Single FETs, MOSFETs Overview

The R6061YNXC7G is a single N-channel silicon power MOSFET manufactured by ROHM Semiconductor. It features a TO-220FM-3 through-hole package with a drain-source voltage rating of 600 V and a continuous drain current capacity of 26 A. The device exhibits a typical on-resistance of 60 mΩ at VGS=10V, with a total gate charge of 76 nC. Power dissipation is rated at 100 W, supporting an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance design suitable for efficient switching applications
High-speed switching capability with defined rise and fall times
Robust thermal performance with 100 W power dissipation rating

Single FETs, MOSFETs Applications

General purpose switching circuits
Power supply implementations
Industrial control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix C7G against official datasheets to confirm tube packaging and quantity specifications. Ensure the TO-220FM-3 footprint matches the target PCB layout requirements. Confirm RoHS compliance status directly with the manufacturer documentation before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V breakdown voltage and 26 A current handling are required in a through-hole configuration. The 60 mΩ on-resistance offers a balance between conduction losses and switching speed. Consider the 100 W thermal dissipation limit for heatsinking calculations in high-duty cycle environments.

Single FETs, MOSFETs Part Context

This part belongs to the R6061YNX series of N-channel power MOSFETs. The series is characterized by low on-resistance and fast switching speeds. The C7G suffix denotes the specific tube packaging format used for distribution and assembly.