RB088BM150FHHTL

RB088BM150FHHTL

$1.94
  • Description:DIODE ARRAY SCHOT 150V 5A TO-252
  • Series:-

SKU:def8f58c518c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOT 150V 5A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:15 µA @ 150 V
  • Operating Temperature - Junction:175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:Automotive
  • Qualification:AEC-Q101

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RB088BM150FHHTL

Overview

The RB088BM150FHHTL is a silicon epitaxial planar Schottky barrier diode featuring a cathode common dual configuration. It is AEC-Q101 qualified for automotive reliability. The device supports a repetitive peak reverse voltage of 150 V and an average rectified forward current of 10 A per diode. Peak forward surge current reaches 50 A. Forward voltage is typically 0.78 V at 5 A, with a maximum reverse current of 15 μA at 150 V. Junction temperature extends to 175 °C. Thermal resistance from junction to case is 1.9 °C/W per diode. It is supplied in a TO-252 package on an embossed tape reel.

Feature Summary

  • High reliability construction suitable for automotive applications
  • Ultra-low reverse leakage current characteristics
  • Power mold type design for robust thermal performance
  • Cathode common dual structure for efficient circuit integration

Applications

  • Switching power supplies

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and marking codes. Confirm that the component meets all required environmental standards for the intended deployment environment. Ensure proper handling procedures are followed due to electrostatic sensitivity during storage and mounting processes.

Selection Notes

Select this component when high junction temperature operation up to 175 °C is required. The low reverse current makes it suitable for sensitive switching circuits. Verify that the TO-252 footprint matches the target PCB layout. Consider the dual common cathode configuration for space-constrained designs requiring two independent rectification paths.

Part Context

This part belongs to the RB088BM series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for high-reliability applications, specifically targeting automotive electronics through AEC-Q101 qualification. The product utilizes silicon epitaxial planar technology to ensure stable electrical characteristics under varying thermal conditions.

Replacement Considerations

RB088BM150FHH offers identical pinout and package specifications as a direct replacement option.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

How is the internal circuit configured?

The device features a cathode common dual type configuration.

Is this component qualified for automotive use?

Yes, the RB088BM150FHHTL is AEC-Q101 qualified.

RB088BM150FHHTLRB088BM150FHHTL
$1.94
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