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The RB088BM150FHHTL is a silicon epitaxial planar Schottky barrier diode featuring a cathode common dual configuration. It is AEC-Q101 qualified for automotive reliability. The device supports a repetitive peak reverse voltage of 150 V and an average rectified forward current of 10 A per diode. Peak forward surge current reaches 50 A. Forward voltage is typically 0.78 V at 5 A, with a maximum reverse current of 15 μA at 150 V. Junction temperature extends to 175 °C. Thermal resistance from junction to case is 1.9 °C/W per diode. It is supplied in a TO-252 package on an embossed tape reel.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and marking codes. Confirm that the component meets all required environmental standards for the intended deployment environment. Ensure proper handling procedures are followed due to electrostatic sensitivity during storage and mounting processes.
Select this component when high junction temperature operation up to 175 °C is required. The low reverse current makes it suitable for sensitive switching circuits. Verify that the TO-252 footprint matches the target PCB layout. Consider the dual common cathode configuration for space-constrained designs requiring two independent rectification paths.
This part belongs to the RB088BM series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for high-reliability applications, specifically targeting automotive electronics through AEC-Q101 qualification. The product utilizes silicon epitaxial planar technology to ensure stable electrical characteristics under varying thermal conditions.
RB088BM150FHH offers identical pinout and package specifications as a direct replacement option.
The maximum operating junction temperature is 175 °C.
The device features a cathode common dual type configuration.
Yes, the RB088BM150FHHTL is AEC-Q101 qualified.