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The RB088NS200FHTL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, housed in a TO-263-3 (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 200 V and an average forward current rating of 10 A. The device exhibits a low forward voltage of 880 mV at 5 A and a maximum reverse leakage current of 7 µA at 200 V. It supports a non-repetitive peak forward surge current of 100 A and operates at junction temperatures up to +150 °C. This component holds AEC-Q101 automotive qualification.
Verify the specific suffix FHTL against official datasheets to confirm tape-and-reel packaging quantities and marking codes. Ensure compatibility with TO-263-3 footprint dimensions during PCB layout. Confirm AEC-Q101 compliance requirements match project specifications before finalizing procurement orders.
Select this component when designing circuits requiring 200 V blocking capability with low forward voltage drop. The TO-263-3 package provides robust thermal dissipation for 10 A continuous current. Consider the AEC-Q101 qualification if the application involves automotive or industrial environments subject to strict reliability standards.
This part belongs to the RB088 series of Schottky barrier diodes designed for automotive use. The series addresses the typical reverse leakage current degradation of Schottky diodes at elevated temperatures through specialized blocking metal structures. It serves as a replacement for standard fast recovery diodes in applications prioritizing efficiency and thermal stability.
The alias RB088NS200FH shares identical electrical characteristics but may differ in packaging format. Verify that any substitute maintains the TO-263-3 package outline and AEC-Q101 automotive grade certification to ensure functional equivalence.