RB088T-60HZC9

Overview

The RB088T-60HZC9 is a silicon epitaxial planar Schottky barrier diode manufactured by ROHM Semiconductor. It features a cathode common dual configuration housed in a TO-220FN (3-pin) leaded package. The device is qualified under the AEC-Q101 automotive standard and supports switching power supply applications. Key electrical parameters include a maximum repetitive peak reverse voltage of 60V, an average rectified forward current of 10A per diode, and a maximum forward voltage of 0.83V at 5A. It exhibits a super low reverse current of 3µA at 60V and operates within a junction temperature range up to 150°C.

Feature Summary

• Cathode common dual type configuration
• High reliability construction
• Super low reverse leakage current

Applications

• Switching power supplies

Procurement Notes

Verify the specific ordering suffix C9 against official documentation to confirm packaging details and compliance status. Confirm that the component meets all required automotive standards for your intended application before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a robust, high-reliability Schottky diode with a through-hole mounting style. Ensure the thermal management system can handle the specified junction-to-case thermal resistance and derating curves to maintain operation within the 150°C maximum junction temperature limit.

Part Context

This part belongs to the RB088T series of Schottky barrier diodes from ROHM Semiconductor. The series is designed for automotive-grade applications, offering high reliability and low reverse current characteristics suitable for demanding power conversion environments.

Replacement Considerations

Consult official ROHM documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical ratings when considering alternatives.