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The RB098BM-30FHTL is a dual anode common cathode silicon Schottky barrier diode manufactured by ROHM Semiconductor. It features a TO-252 (DPAK) surface-mount package with three terminals. The device supports a maximum repetitive reverse voltage of 35 V and a continuous forward current of 6 A. Key electrical characteristics include a maximum forward voltage of 0.77 V at 3 A, a peak forward surge current capability of 100 A, and a maximum reverse leakage current of 3 µA. It operates at junction temperatures up to +150 °C and holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix to confirm the tape-and-reel packaging format intended for automated assembly. Confirm that the component status remains acceptable for your production timeline, as availability may vary based on manufacturing cycles. Ensure that the lead time aligns with your project schedule before finalizing procurement orders.
Select this component when a dual common cathode topology is required within a compact DPAK footprint. It is suitable for designs needing low forward voltage drop and high surge current handling. Verify that the 35 V rating meets the circuit's peak inverse voltage requirements and that the thermal management strategy supports the specified junction temperature limits.
This part belongs to ROHM's automotive-grade Schottky barrier diode family designed for robust performance in harsh environments. The RB098BM series utilizes silicon technology to provide fast switching characteristics and low power loss. It is engineered to meet stringent automotive quality standards while maintaining compatibility with standard surface-mount assembly processes.
The RB098BM-30FH is listed as a similar level replacement with the same pinout and package. Note that the RB098BM-30FHTL and RB098BM-30FHHTL are also identified as similar levels with identical specifications and packaging configurations.