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Product Detailed Parameters
- Description：DIODE ARR SCHOTT 35V 10A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：35 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：720 mV @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：5 µA @ 30 V
- Operating Temperature - Junction：150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FN
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RB218T-30HZC9 is a Schottky barrier diode featuring a cathode common dual configuration. It operates with a maximum repetitive peak reverse voltage of 35V and a continuous average forward rectified current of 20A per diode at a case temperature of 120°C. The device exhibits a maximum forward voltage of 0.72V at 10A and a maximum reverse current of 5µA at 30V. It supports a non-repetitive surge current of 100A and maintains an operating junction temperature up to 150°C.
Feature Summary
- Cathode common dual type structure
- High reliability construction
- Super low reverse leakage current
Applications
- Switching power supplies
Procurement Notes
Verify the specific C9 suffix against official documentation, as it may indicate a particular packaging or marking variation. Confirm that the component meets AEC-Q101 automotive standards if required for your application. Ensure compatibility with TO-220FN mounting styles and leaded installation methods during integration.
Selection Notes
Select this component for applications requiring high current handling in a dual-diode arrangement. The low forward voltage drop contributes to improved efficiency in power conversion circuits. Verify thermal management requirements based on the specified junction-to-case thermal resistance and derating curves for ambient conditions.
Part Context
This part belongs to the RB218T series of Schottky barrier diodes manufactured by ROHM Semiconductor. The series is designed for robust performance in switching power applications. The device utilizes silicon epitaxial planar technology to ensure stable electrical characteristics under varying thermal loads.
Replacement Considerations
Consult official substitution lists for equivalent parts with matching pinouts and specifications. Verify that any replacement maintains the same package dimensions and thermal characteristics to ensure proper fit and function in existing designs.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
How is the internal configuration arranged?
The device features a cathode common dual type configuration.
What is the maximum reverse current specification?
The maximum reverse current is 5µA when measured at a reverse voltage of 30V.
