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The RB218T150HZC9 is a Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-220FN-3 through-hole package. The device utilizes silicon technology and meets AEC-Q101 automotive qualification standards. Key electrical specifications include a repetitive reverse voltage of 150 V and an average forward current rating of 20 A. The maximum forward voltage is specified at 0.88 V when tested at 10 A. The component supports a forward surge current of 100 A and maintains a low reverse current of 0.02 mA at 150 V. It operates within a junction temperature range up to +150°C.
Verify the specific suffix HZC9 against official datasheets to confirm package type and packaging format. Ensure compatibility with existing PCB footprints for the TO-220FN-3 housing. Confirm that the AEC-Q101 qualification aligns with target automotive or industrial requirements. Check for any obsolescence notices as this model may be designated for existing customers only.
Select this component when a dual diode solution is required in a through-hole package. The 150 V rating suits medium-voltage applications. Consider the 20 A continuous current capability for moderate power loads. The low reverse leakage makes it suitable for high-temperature operation where standard Schottky diodes might fail due to thermal instability.
This part belongs to the RB218 series of Schottky barrier diodes from ROHM Semiconductor. The series is engineered to address thermal runaway issues common in high-temperature environments using blocking metal technology. It serves as a replacement for conventional fast recovery diodes in applications demanding higher efficiency and lower heat generation.
RB218T150NZC9 is a confirmed substitute within the same series offering identical electrical ratings and package configuration.