RBN25H125S1FPQ-A0#CB0

$5.47

Description：IGBT TRENCH 1250V 50A TO-247A
Series：-

SKU:0612d860db24 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1250V 50A TO-247A
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1250 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.34V @ 15V, 25A
Power - Max：223 W
Switching Energy：1.1mJ (on), 800µJ (off)
Input Type：Standard
Gate Charge：56 nC
Td (on/off) @ 25°C：19ns/109ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：102 ns
Operating Temperature：175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247A
Grade：-
Qualification：-

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RBN25H125S1FPQ-A0#CB0

Overview

The RBN25H125S1FPQ-A0#CB0 is a single trench insulated-gate bipolar transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage of 1250 V and a continuous collector current rating of 25 A. The device incorporates a built-in fast recovery diode (FRD) and operates with a collector-emitter saturation voltage of 1.8 V. Maximum gate-emitter leakage current is specified at 1 uA, with a maximum operating junction temperature of 175°C. Packaged in a through-hole TO-247A housing, the component delivers a power dissipation capacity of 223 W.

Feature Summary

Trench IGBT technology for efficient power switching
Integrated fast recovery diode for simplified circuit design
Low collector-emitter saturation voltage to minimize conduction losses

Applications

Transportation equipment including automobiles, trains, and ships
Traffic control systems such as traffic lights
Large-scale communication infrastructure

Procurement Notes

Verify the specific ordering suffix #CB0 against official Renesas documentation to confirm package type and compliance status. Ensure the requested quantity matches standard packaging configurations defined in the latest datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 1250 V and moderate current handling at 25 A. The integrated FRD eliminates the need for external parallel diodes, reducing board space. Consider the TO-247A package for thermal management requirements and through-hole mounting constraints in industrial or automotive environments.

Part Context

This IGBT belongs to Renesas' single transistor lineup designed for medium-power switching applications. It complements other devices in the series offering varying voltage and current ratings. The product line emphasizes reliability for critical infrastructure and transportation sectors where robust performance under high thermal stress is essential for system longevity.

Replacement Considerations

Consult official Renesas substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins when considering cross-brand replacements. Ensure any substitute device meets the same 1250 V and 25 A specifications without compromising thermal performance in the TO-247A form factor.