RBR20BM30ATL

RBR20BM30ATL

$1.88
  • Description:DIODE ARRAY SCHOT 30V 10A TO-252
  • Series:-

SKU:876f9e1739ba Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY SCHOT 30V 10A TO-252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:510 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:300 µA @ 30 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Grade:-
  • Qualification:-

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RBR20BM30ATL

Overview

The RBR20BM30ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 30 V and an average forward current of 20 A. Key electrical parameters include a typical forward voltage of 510 mV at 10 A, a peak forward surge current capability of 100 A, and a maximum reverse leakage current of 30 uA. It operates within a junction temperature range up to +150 C and holds AEC-Q101 automotive qualification.

Feature Summary

  • Dual anode common cathode configuration enables efficient rectification in bridge or synchronous applications
  • Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment durability
  • Low forward voltage drop characteristics contribute to reduced power loss and improved thermal performance

Applications

  • Automotive DC-DC converter circuits
  • On-board charger rectification stages
  • General purpose power supply output rectification

Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.

Selection Notes

Select this component when a robust, automotive-qualified Schottky diode with high current handling is required in a DPAK package. Compare forward voltage and reverse leakage specifications against alternative dual-anode devices to ensure compatibility with system efficiency targets and thermal management constraints.

Part Context

This part belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes. The series is engineered for high reliability in vehicle electronics, offering superior switching characteristics compared to standard PN junction diodes while maintaining ruggedness against voltage transients common in automotive power systems.

Replacement Considerations

Direct substitutes include the RBR20BM30AFH and RBR20BM30AFHTL, which share identical electrical ratings and pin configurations. Verify that any replacement maintains the same dual-anode common-cathode topology and TO-252-3 footprint.

RBR20BM30ATLRBR20BM30ATL
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