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The RBR20BM30ATL is a silicon Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-reliability applications. It features a dual anode common cathode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 30 V and an average forward current of 20 A. Key electrical parameters include a typical forward voltage of 510 mV at 10 A, a peak forward surge current capability of 100 A, and a maximum reverse leakage current of 30 uA. It operates within a junction temperature range up to +150 C and holds AEC-Q101 automotive qualification.
Verify the specific suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.
Select this component when a robust, automotive-qualified Schottky diode with high current handling is required in a DPAK package. Compare forward voltage and reverse leakage specifications against alternative dual-anode devices to ensure compatibility with system efficiency targets and thermal management constraints.
This part belongs to ROHM's RBR series of automotive-grade Schottky barrier diodes. The series is engineered for high reliability in vehicle electronics, offering superior switching characteristics compared to standard PN junction diodes while maintaining ruggedness against voltage transients common in automotive power systems.
Direct substitutes include the RBR20BM30AFH and RBR20BM30AFHTL, which share identical electrical ratings and pin configurations. Verify that any replacement maintains the same dual-anode common-cathode topology and TO-252-3 footprint.