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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 3.5A 8SOIC
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The RF1K4909096 is a dual N-channel Power MOSFET manufactured by Fairchild Semiconductor. It features a 12V drain-source voltage rating and supports a continuous drain current of 3.5A. The device exhibits a maximum on-resistance of 0.05 ohms, ensuring efficient power handling in low-voltage applications. Packaged in an 8-SOIC configuration, this component utilizes silicon metal-oxide semiconductor technology for reliable performance in discrete semiconductor circuits.
Feature Summary
- Dual N-channel configuration for integrated switching solutions
- Logic-level operation compatible with standard digital interfaces
- Low on-resistance for improved thermal efficiency
Applications
- Power management circuits requiring dual channel control
- Low-voltage DC-DC converter topologies
- Battery protection systems
Procurement Notes
Verify the manufacturer part number against official Fairchild Semiconductor documentation to confirm authenticity. Ensure the received components match the specified 8-SOIC package dimensions and pinout configuration. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.
Selection Notes
Select this component when a dual N-channel MOSFET with a 12V rating and 3.5A current capacity is required. The low on-resistance makes it suitable for applications prioritizing efficiency in small form factors. Confirm that the logic-level drive requirements align with the system's control voltage levels before integration.
Part Context
This part belongs to the LittleFET family of power MOSFETs designed for compact power switching applications. The dual configuration allows for space-saving designs in circuits requiring two independent N-channel switches within a single package, commonly used in portable electronics and industrial control modules.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs featuring similar 12V ratings and SOIC packaging. Verify pin compatibility and electrical characteristics such as Rds(on) and Id before substitution.
