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RF1S23N06LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is 23A, 60V, 0.065OHM, N-CHANNEL,. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RF1S23N06LE
- Description：23A, 60V, 0.065OHM, N-CHANNEL,
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：65mOhm @ 23A, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK (TO-262)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for RF1S23N06LE
Single FETs, MOSFETs Overview
The RF1S23N06LE is an N-Channel power MOSFET manufactured by Harris Corporation using the MegaFET process. It features a 60V drain-source voltage rating and supports a continuous drain current of 23A at case temperature. The device exhibits a maximum on-resistance of 0.065 ohms. Thermal performance includes a power dissipation capacity of 75W at case temperature. It is housed in a through-hole I2PAK (TO-262) package.
Single FETs, MOSFETs Feature Summary
- Manufactured using the MegaFET process technology for enhanced reliability.
- Designed as an N-Channel Enhancement-Mode Power MOSFET.
- Features ESD rated and avalanche rated construction.
Single FETs, MOSFETs Applications
- Switching applications requiring logic level drive compatibility.
- Power management circuits utilizing through-hole mounting.
- General purpose power switching environments.
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches I2PAK (TO-262) requirements. Ensure thermal management solutions align with the 75W case temperature dissipation rating. Validate that sourcing channels provide original Harris Corporation documentation to guarantee electrical parameter compliance.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole N-Channel MOSFET with 60V capability is required. The 0.065 ohm on-resistance suits moderate current switching tasks up to 23A. Consider the I2PAK package for board space constraints compatible with TO-262 footprints. Verify gate drive levels match the logic level enhancement-mode characteristics for efficient switching operation.
Single FETs, MOSFETs Part Context
This part belongs to the Harris Corporation RF1S series of single FETs and MOSFETs. It shares manufacturing processes with related models like the RFP30N06LE, which utilizes similar MegaFET technology but differs in current ratings and package options such as TO-220AB. The series targets robust power switching applications.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with Harris Corporation models sharing identical pinouts and electrical limits. Verify that substitute parts maintain the 60V rating and comparable on-resistance values. Ensure replacement packages fit the existing I2PAK footprint without mechanical modification.
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