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The RF1S30N06LE is a single-element, N-channel silicon power MOSFET manufactured by Harris. It features a TO-263AB (D2-Pak) surface-mount package with gull-wing terminals. The device has a minimum drain-source breakdown voltage of 60 V and a maximum continuous drain current of 30 A. Its maximum on-resistance is specified at 0.065 Ω. The component operates in enhancement mode and includes a built-in body diode.
Verify the specific suffix against the manufacturer's official datasheet to confirm lead-free status and exact electrical tolerances. Ensure the TO-263AB footprint matches the target PCB design. Confirm that the Harris part number aligns with current Intersil or Renesas specifications if sourcing from legacy distributors.
Select this component when a 60 V rating and 30 A current capacity are required in a D2-Pak package. The 0.065 Ω on-resistance suits moderate efficiency needs. Verify logic-level compatibility if driving directly from low-voltage microcontrollers without additional gate drivers.
This part belongs to the RF1S series of power MOSFETs from Harris Corporation, later continued by Intersil and Renesas. The series offers various voltage and current ratings in the TO-263AB package. The 'LE' suffix typically denotes lead-free compliance in this product line.
RF1S30N06LESM: Same electrical specifications but with SM suffix indicating standard packaging. RF1S45N06LE: Higher current rating (45 A) with slightly higher on-resistance (0.028 Ω). IRFP460: Different package (TO-247) with similar voltage but lower current.