RF1S30N06LE

RF1S30N06LE

$0.67
  • Description:MOSFET N-CH 60V 30A
  • Series:*

SKU:c48d355d7416 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 30A
  • Series:*
  • Mfr:Harris Corporation
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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RF1S30N06LE

Overview

The RF1S30N06LE is a single-element, N-channel silicon power MOSFET manufactured by Harris. It features a TO-263AB (D2-Pak) surface-mount package with gull-wing terminals. The device has a minimum drain-source breakdown voltage of 60 V and a maximum continuous drain current of 30 A. Its maximum on-resistance is specified at 0.065 Ω. The component operates in enhancement mode and includes a built-in body diode.

Feature Summary

  • Logic level compatible gate drive for efficient control
  • Integrated body diode for synchronous rectification or freewheeling
  • Lead-free compliant packaging variant available

Applications

  • DC-DC converter circuits
  • Motor driver stages
  • Power switching applications requiring logic-level input

Procurement Notes

Verify the specific suffix against the manufacturer's official datasheet to confirm lead-free status and exact electrical tolerances. Ensure the TO-263AB footprint matches the target PCB design. Confirm that the Harris part number aligns with current Intersil or Renesas specifications if sourcing from legacy distributors.

Selection Notes

Select this component when a 60 V rating and 30 A current capacity are required in a D2-Pak package. The 0.065 Ω on-resistance suits moderate efficiency needs. Verify logic-level compatibility if driving directly from low-voltage microcontrollers without additional gate drivers.

Part Context

This part belongs to the RF1S series of power MOSFETs from Harris Corporation, later continued by Intersil and Renesas. The series offers various voltage and current ratings in the TO-263AB package. The 'LE' suffix typically denotes lead-free compliance in this product line.

Replacement Considerations

RF1S30N06LESM: Same electrical specifications but with SM suffix indicating standard packaging. RF1S45N06LE: Higher current rating (45 A) with slightly higher on-resistance (0.028 Ω). IRFP460: Different package (TO-247) with similar voltage but lower current.

RF1S30N06LERF1S30N06LE
$0.67
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