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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RF1S530SM9A is a single-element, N-channel silicon power MOSFET manufactured by Harris. It operates in enhancement mode and utilizes a TO-263AB (D2PAK) surface-mount package. The device features a minimum drain-source breakdown voltage of 100 V and supports a maximum continuous drain current of 14 A. Its maximum on-resistance is specified at 0.16 ohms. The component is constructed with a plastic/epoxy body and gull-wing terminals.
Feature Summary
- N-channel silicon metal-oxide semiconductor construction for efficient power switching
- Logic-level compatible enhancement mode operation
- Integrated thermal management via exposed drain pad in TO-263AB package
Applications
- DC-DC converter circuits
- Motor control applications
- Power supply output stages
Procurement Notes
Verify the exact suffix configuration against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides traceable documentation linking to the original Harris Semiconductor specifications. Confirm that the received components match the TO-263AB package dimensions and terminal finish requirements specified in the JEDEC standards.
Selection Notes
Select this component when a 100V rating and 14A current capacity are required for low-side switching applications. The 0.16 ohm on-resistance makes it suitable for moderate efficiency power conversion tasks. Consider the TO-263AB package for board space constraints while maintaining adequate heat dissipation capabilities without requiring extensive external heatsinking for lower duty cycles.
Part Context
This part belongs to the Harris RF1S series of power MOSFETs designed for general-purpose switching applications. The series offers various voltage and current ratings within the same package family to simplify design processes. Harris Semiconductor was a key provider of analog and mixed-signal integrated circuits before its acquisition by Intersil, which later became part of Renesas Electronics.
Replacement Considerations
Direct replacements must match the 100V, 14A, 0.16 ohm specifications and TO-263AB footprint. Verify gate charge and threshold voltage compatibility to ensure equivalent switching performance in existing circuit designs.
