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RF1S640SM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is MOSFET N-CH 200V 18A TO263AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RF1S640SM
- Description：MOSFET N-CH 200V 18A TO263AB
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1275 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for RF1S640SM
Single FETs, MOSFETs Overview
The RF1S640SM is an N-Channel enhancement mode silicon gate power MOSFET manufactured by Harris Corporation. It features a TO-263AB surface mount package. Key electrical parameters include a Drain-to-Source Voltage (Vdss) of 200 V and a Continuous Drain Current (Id) of 18 A at case temperature. The device has a maximum power dissipation rating of 125 W at case temperature.
Single FETs, MOSFETs Feature Summary
- N-Channel enhancement mode silicon gate construction
- Surface mount TO-263AB packaging for thermal efficiency
- Designed as an advanced power MOSFET
Single FETs, MOSFETs Applications
- Power switching circuits
- DC-DC converter applications
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin, as Harris Corporation's semiconductor assets were acquired by International Rectifier (now Infineon). Ensure the component matches the specific IRF640 family specifications if sourcing from current distributors. Check RoHS compliance status carefully, as legacy Harris parts may differ from modern equivalents. Confirm the TO-263AB package type and pinout compatibility with your PCB design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V N-Channel MOSFET with 18 A continuous drain current capability is required in a surface mount format. The TO-263AB package offers a balance between thermal performance and board space. Consider the 125 W power dissipation limit at case temperature for heat sink requirements. Verify that the enhancement mode characteristics align with the gate drive voltage levels available in the target circuit design.
Single FETs, MOSFETs Part Context
The RF1S640SM belongs to the IRF640 series of power MOSFETs originally developed by Harris Semiconductor. This series represents advanced silicon gate technology designed for high-efficiency power switching applications. The part is functionally related to the IRF640, IRF641, IRF642, and IRF643 variants, sharing similar core electrical characteristics but potentially differing in specific testing or packaging details defined by the original manufacturer.
Single FETs, MOSFETs Replacement Considerations
The IRF640 is a primary functional substitute within the same family. Other compatible parts include IRF641, IRF642, and IRF643. Verify pinout and thermal resistance values when substituting, as these may vary slightly between manufacturers holding the rights to the original Harris designs.
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