RF2L15200CB4

Overview

The RF2L15200CB4 is a dual N-channel RF power LDMOS transistor manufactured by STMicroelectronics. It delivers 200 W of output power with a gain of 17.5 dB at an operating frequency of 860 MHz. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +200°C. It utilizes an LBB-5 surface-mount package and operates within a gate-source voltage range of -6 V to +10 V, with a threshold voltage of 2.5 V.

Feature Summary

• Dual N-channel configuration for push-pull applications
• High thermal stability up to +200°C
• Internal matching for simplified circuit design

Applications

• HF to 1.5 GHz RF power amplification
• Industrial heating and RF energy systems
• Medical equipment RF generators

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the LBB-5 package footprint matches the target PCB layout requirements. Ensure handling procedures account for moisture sensitivity levels as indicated in the official documentation.

Selection Notes

Select this component when a dual-channel solution is required for balanced RF power delivery in the HF band. The 65 V breakdown voltage provides headroom for standard 28 V supply rails. Consider the LBB-5 SMD package constraints during thermal management planning to maintain operation within the specified +200°C limit.

Part Context

This part belongs to STMicroelectronics' RF2L series of LDMOS transistors designed for high-power RF applications. It shares the LBB-5 package form factor with other devices in the family but differs in channel count and frequency optimization compared to single-channel variants like the RF3L05200CB4.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.