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Product Detailed Parameters
- Description：RF MOSFET LDMOS A2
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- Technology：LDMOS
- Frequency：1.3GHz ~ 1.7GHz
- Gain：18dB
- Voltage - Test：-
- Current Rating (Amps)：1µA
- Noise Figure：-
- Current - Test：-
- Power - Output：80W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：2L-FLG
- Supplier Device Package：A2
- Configuration：-
Download product information
Overview
The RF2L16080CF2 is an N-channel silicon RF power LDMOS transistor manufactured by STMicroelectronics. Designed for high-frequency applications, it operates at a center frequency of 1.3 to 1.7 GHz with a rated output power of 80 W. The device features a drain-source breakdown voltage (Vds) of 65 V and a typical on-resistance (Rds(on)) of 1 Ohm. It provides a gain of 18 dB and supports a maximum operating temperature of +200°C. Packaged in the A2-3 surface-mount format, this component is classified as Not Recommended for New Designs (NRND).
Feature Summary
- High-power RF performance with 80 W output capability in the 1.3–1.7 GHz band.
- Robust thermal stability supporting operation up to +200°C junction temperature.
- Integrated N-channel LDMOS technology optimized for radio frequency amplification.
Applications
- RF power amplification in cellular base station infrastructure.
- Broadband RF signal generation and transmission systems.
- Industrial, Scientific, and Medical (ISM) radio frequency equipment.
Procurement Notes
This component carries an NRND status, indicating it is not recommended for new designs. Verification of current lifecycle status and potential obsolescence is critical before integration. Sourcing should prioritize authorized distributors to ensure authenticity. Due to the discontinued nature, availability may be limited to existing stock or last-time buys. Confirm end-of-life notifications and substitute part numbers prior to procurement planning.
Selection Notes
Select this component only for legacy system maintenance or specific high-power RF requirements within the 1.3–1.7 GHz range. Ensure the design accommodates the A2-3 package dimensions and thermal management needs for +200°C operation. Verify that the 65 V drain-source voltage rating aligns with the circuit's supply constraints. Consider alternative active devices if new product development is intended due to the NRND classification.
Part Context
The RF2L16080CF2 belongs to STMicroelectronics' portfolio of RF MOSFET transistors designed for demanding radio frequency environments. It utilizes silicon LDMOS technology to deliver high linearity and efficiency. This specific model targets the UHF/SHF bands, serving as a key active element in power amplifier stages where robustness and high output power are required.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult STMicroelectronics technical support for validated cross-reference recommendations compatible with the A2-3 package and 80 W power specifications.
FAQ
What is the operational frequency range of the RF2L16080CF2?
The device is designed to operate within the 1.3 to 1.7 GHz frequency range.
Is the RF2L16080CF2 suitable for new product designs?
No, the component is marked as NRND (Not Recommended for New Designs).
What is the maximum junction temperature for this transistor?
The maximum operating temperature is specified as +200°C.
