RF2L16180CB4

Overview

The RF2L16180CB4 is an 180 W, 28 V internally matched LDMOS transistor designed for multicarrier base station and ISM applications operating between 1.3 and 1.6 GHz. It delivers a typical power gain of 14 dB and drain efficiency of 60% at 1450 MHz under pulsed conditions. The device features a B4E package with five pins: two drains, two gates, and a common source on the bottom side. Absolute maximum ratings include a drain-source breakdown voltage of 65 V, a gate-source voltage range of -6 to 10 V, and a maximum junction temperature of 200 °C.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched for simplified circuit design
• Integrated ESD protection compliant with HBM Class 1C and CDM Class C3 standards
• Supports large positive and negative gate-source voltage ranges for improved Class C operation

Applications

• Multicarrier WCDMA/PCS/DCS/LTE base stations
• Industrial, scientific and medical (ISM) equipment
• Doherty power amplifier architectures

Procurement Notes

Verify component authenticity through authorized STMicroelectronics channels or certified distributors. Confirm the specific ordering code matches the required specifications. Review the latest datasheet revision history for any updates to electrical characteristics or package dimensions before finalizing procurement orders.

Selection Notes

Select this component for high-power RF applications requiring internal matching within the 1.3 to 1.6 GHz band. Ensure thermal management solutions can handle the junction-to-case thermal resistance of 0.38 °C/W. Verify that the external biasing network accommodates the specified gate-source voltage limits and threshold requirements for the intended operating class.

Part Context

This part belongs to STMicroelectronics' RF power LDMOS transistor family. It is specifically engineered for wireless infrastructure where high linearity and efficiency are critical. The B4E package provides a robust mechanical solution for high-power density applications in telecommunications equipment.

Replacement Considerations

No direct public substitute part numbers are documented in the official datasheet. Designers should evaluate other ST LDMOS transistors with similar power levels and frequency ranges, ensuring compatibility with existing matching networks and thermal constraints.