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The RF2L16180CF2 is an N-channel silicon RF power LDMOS transistor manufactured by STMicroelectronics. It operates within the 1.3 to 1.7 GHz frequency range, delivering a continuous wave output power of 180 W at 28 V. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, a gate-source voltage range of -6 V to +10 V, and a threshold voltage (Vgs th) of 2.5 V. The device exhibits a typical gain of 17.5 dB and a drain-source on-resistance (Rds On) of 1 Ohm. It supports a maximum operating temperature of +200°C and is housed in a B2-3 surface-mount package.
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm RoHS compliance status via official datasheets before integration. Ensure supply chain documentation matches the specific B2-3 package variant. Validate lot traceability against manufacturing records to guarantee reliability standards are met for critical RF deployments.
Select this component when designing circuits requiring 180 W output power within the 1.3–1.7 GHz spectrum. Ensure the system can provide a stable 28 V supply and manage heat dissipation for the B2-3 package. Verify that the PCB layout accommodates the specific pinout and thermal pad requirements of the SMD form factor for optimal RF performance.
This device belongs to STMicroelectronics' RFXL series of RF power LDMOS transistors. The series is engineered for high performance across various frequency bands, offering designers reliable solutions for modern wireless infrastructure. The RF2L16180CF2 specifically targets applications demanding high linearity and power density in a compact surface-mount footprint.
Consult official STMicroelectronics substitution guides for verified alternatives. Cross-reference technical specifications such as Vds, Pout, and package dimensions before considering any third-party equivalents to ensure circuit compatibility.