RF2L42008CG2

Overview

The RF2L42008CG2 is an RF power LDMOS transistor manufactured by STMicroelectronics. It delivers 8 W of output power with a drain-source voltage rating of 28 V. The device operates within a frequency range of 0.7 to 4.2 GHz. It utilizes advanced STH5 technology for high performance. The component is classified as NRND, indicating it is not recommended for new designs.

Feature Summary

• High-performance RF power LDMOS construction
• Broadband operation capability across UHF and SHF bands
• Designed for robustness in demanding RF environments

Applications

• Wireless communication infrastructure
• Industrial, Scientific, and Medical (ISM) equipment
• Broadband signal amplification systems

Procurement Notes

Verify current availability status as the component is designated NRND. Confirm that existing stock meets project requirements since new design integration is discouraged. Check for end-of-life notifications from the manufacturer. Ensure supply chain stability before finalizing procurement plans for this specific part number.

Selection Notes

Consider the NRND status when selecting this component for long-term projects. Evaluate alternative devices within the RFXL or other STMicroelectronics RF portfolios for future scalability. Assess thermal management requirements based on the 8 W output specification. Verify compatibility with the 28 V operating voltage in the target circuit design.

Part Context

This transistor belongs to STMicroelectronics' portfolio of RF power LDMOS devices. It is part of a family designed for broadband applications. The specific model targets markets requiring reliable RF amplification. It represents a mature technology node within the manufacturer's discrete semiconductor lineup.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Review the RFXL series for potential upgrades. Verify pinout and electrical parameter compatibility before replacing the component in existing assemblies.