RF3L05200CB4

RF3L05200CB4

  • Description:RF MOSFET LDMOS LBB
  • Series:-

SKU:2e0ccad329bb Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS LBB
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1GHz
  • Gain:19dB
  • Voltage - Test:-
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:200W
  • Voltage - Rated:90 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:LBB
  • Supplier Device Package:LBB
  • Configuration:-

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RF3L05200CB4

Overview

The RF3L05200CB4 is a silicon N-channel LDMOS transistor manufactured by STMicroelectronics. It delivers 200 W output power at a Vds of 28 V and operates from HF to 1 GHz, with a specified frequency of 945 MHz. The device provides 16 dB gain and features an LBB-3 package for through-hole mounting. It supports Class AB/B/C operation and includes integrated ESD protection.

Feature Summary

  • Designed for wide-band communication and ISM applications across HF to 1 GHz frequencies.
  • Supports high efficiency and linear gain operations in Class AB, B, and C configurations.
  • Features integrated electrostatic discharge (ESD) protection.
  • Offers a large positive and negative gate/source voltage range to improve Class C operation.

Applications

  • Wide-band communication systems
  • ISM band applications
  • RF power amplification

Procurement Notes

Verify the current lifecycle status before integration, as this component may be marked as Not Recommended for New Designs. Confirm availability through authorized distributors, noting that lead times can extend up to 52 weeks. Ensure compliance with RoHS directives and check for any specific discontinuation notifications prior to finalizing procurement plans.

Selection Notes

Select this part for designs requiring 200 W output power within the HF to 1 GHz range. The LBB-3 through-hole package dictates board layout constraints. Verify thermal management capabilities for +200°C maximum junction temperature. Consider the 28 V drain-source voltage rating when designing bias circuits for Class AB, B, or C modulation formats.

Part Context

This component belongs to the STMicroelectronics RF3L series of LDMOS transistors. Similar models include the RF3L05150CB4 (150 W) and RF3L05250CB4 (250 W), which share comparable operating voltages and frequency ranges but differ in power handling and package types. These devices are engineered for robust RF performance in demanding communication environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate the RF3L05150CB4 or RF3L05250CB4 for alternative power levels, though package differences (LBB-4 vs. LBB-3) require mechanical redesign.

RF3L05200CB4RF3L05200CB4

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