RF4L10700CB4

Overview

The RF4L10700CB4 is a high-performance, internally matched LDMOS FET designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It delivers 700 W output power with a 40 V operation qualification. The device features integrated ESD protection and internally matched pair transistors in a push-pull configuration. It supports Class AB, B, or C operation for both CW and pulse applications in narrow-band scenarios.

Feature Summary

• Internally matched pair transistors in push-pull configuration
• Integrated ESD protection
• Optimized for Doherty applications
• Large positive and negative gate-source voltage range

Applications

• Multiple ISM applications
• RF energy applications
• Class AB, B or C narrow-band operation
• CW and pulse applications

Procurement Notes

Verify the current lifecycle status before procurement as the component may be obsolete. Confirm package type and moisture sensitivity level requirements against specific design constraints. Ensure compatibility with existing thermal management solutions given the high power density. Validate that the internal matching network aligns with the target impedance requirements of the application circuit.

Selection Notes

Select this component for designs requiring high efficiency and linear gain operations within the HF to 1 GHz range. Consider its suitability for Doherty amplifier architectures due to optimized performance characteristics. Evaluate the large gate-source voltage range if Class C operation is required for improved efficiency. Ensure the system can handle the thermal stability and low HCI drift properties inherent to this silicon technology.

Part Context

This part belongs to STMicroelectronics' portfolio of RF MOSFET transistors, specifically utilizing Silicon LDMOS technology. It is categorized under RF Power MOSFETs and falls within the broader family of components designed for high-frequency power amplification tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with any potential alternative devices by comparing electrical parameters such as breakdown voltage, output power, and frequency range.