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The RF5L051K0CB4 is a 1000 W, 50 V high-performance unmatched LDMOS FET designed for wideband commercial and industrial applications. It operates in the frequency range from HF to 500 MHz and supports both CW and pulse modes. Key electrical characteristics include high efficiency, linear gain operations, and large positive and negative gate-source voltage ranges optimized for Class C operation. The device features integrated ESD protection and an on-chip RC network for enhanced stability and ruggedness.
Verify current availability status as this component may be subject to supply constraints or end-of-life notices. Confirm RoHS compliance documentation and check for any specific handling requirements related to its humidity sensitivity classification before procurement.
Select this transistor for wideband designs requiring 1 kW output between HF and 500 MHz. Ensure the design accommodates the large gate-source voltage swing for Class C biasing. Verify that the application does not require internal matching, as this device is an unmatched FET requiring external impedance networks.
This part belongs to STMicroelectronics' RFXL series of RF power LDMOS transistors. These devices are engineered for high performance across various frequency bands. The RF5L051K0CB4 specifically targets the lower end of the UHF spectrum up to 500 MHz, distinguishing it from higher-frequency counterparts in the same family.
Check for direct pin-compatible substitutes within the RFXL series such as the RF5L051K5CB4 for higher power needs. Verify if updated revisions exist. No other public confirmed substitute part numbers are available.