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The RF5L052K0CB4 is a silicon LDMOS transistor manufactured by STMicroelectronics, rated for 2 kW output power at 50 V. It operates in the frequency range from HF to 500 MHz with a typical gain of 19.5 dB. The device features a D4E package designed for chassis mounting and includes integrated ESD protection. It supports both continuous wave and pulse applications, offering high efficiency and linear gain operations suitable for wideband commercial and industrial uses.
Verify component authenticity through authorized channels due to end-of-life status. Check for RoHS compliance documentation and humidity sensitivity handling requirements during storage and assembly. Confirm package integrity as the unit utilizes a tray packaging format requiring specific handling protocols to prevent damage to the sensitive semiconductor junctions.
Select this component for wideband applications requiring high power density up to 2 kW within the HF to 500 MHz spectrum. Ensure thermal management solutions accommodate the chassis-mounted D4E package design. Consider the large gate voltage range if designing for Class C amplifier configurations to optimize efficiency and linearity performance in demanding RF environments.
This part belongs to the RF5L series of unmatched LDMOS FETs from STMicroelectronics. It shares architectural similarities with the RF5L051K0CB4 but offers higher power output. The series is characterized by high efficiency and linear gain, targeting wideband commercial and industrial sectors where robust performance under varying load conditions is critical.
The RF5L052K0CB4 has been officially discontinued as of July 22, 2024. No direct functional substitutes are listed in official documentation. Designers should evaluate alternative high-power LDMOS transistors from other manufacturers or consider redesigning for lower power densities if compatible components are available.