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The RF5L05750CF2 is an RF power LDMOS transistor manufactured by STMicroelectronics. It is designed for high-frequency applications ranging from HF to 500 MHz. The device delivers a continuous wave output power of 750 W with a drain-source voltage rating of 50 V. Constructed using silicon technology, it belongs to the RF MOSFET transistor category. The component is supplied in a reel package format and exhibits humidity sensitivity. It operates within a temperature range extending up to +200 °C maximum working temperature.
Verify the specific datasheet revision and electrical characteristics directly from STMicroelectronics official documentation before integration. Confirm that the reel packaging format aligns with automated assembly requirements. Ensure compliance with RoHS directives and check humidity sensitivity handling procedures during storage and soldering processes to maintain device integrity.
Select this component when designing circuits requiring 750 W output power within the 500 MHz bandwidth. Ensure the thermal management system supports the high junction temperatures associated with this power level. Verify that the 50 V drain-source voltage rating matches the supply rail constraints of the target amplifier topology.
This part belongs to the STMicroelectronics RF MOSFET transistor family, specifically categorized under RF power devices. It utilizes silicon technology and is distinct from bipolar or GaN alternatives. The product line focuses on delivering high efficiency and power density for industrial and communication infrastructure applications.
Consult STMicroelectronics official substitution guides for verified equivalent parts. Cross-reference pinouts and thermal pads carefully. Do not assume compatibility based solely on power ratings without verifying internal structure and frequency response data.