SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RF5L05950CF2 is an RF power LDMOS transistor manufactured by STMicroelectronics. It operates within the HF to 500 MHz frequency range and delivers a maximum output power of 950 W. The device is rated for a drain-source voltage (Vds) of 50 V. Constructed using silicon technology, it is designed for high-power radio frequency applications. The component is supplied in a reel package format.
Verify the specific datasheet revision and RoHS compliance status directly with STMicroelectronics or authorized distributors before procurement. Confirm that the reel packaging quantity matches your production requirements. Ensure handling procedures account for moisture sensitivity as indicated in the component specifications.
Select this component for applications requiring high power density in the HF to 500 MHz band. The 50 V supply rating suits standard telecom and broadcast power supplies. Consider thermal management solutions compatible with high-power SMD packages. Evaluate system efficiency needs against the device's specified performance characteristics.
This part belongs to STMicroelectronics' broad portfolio of RF LDMOS transistors. The series targets applications from 1 MHz to 4 GHz with supply voltages ranging from 7 V to 50 V. These devices are engineered for cost-effective, high-performance solutions in industrial and communication sectors.
Consult official STMicroelectronics documentation for verified substitute part numbers. Cross-reference electrical parameters such as Vds, output power, and frequency range when evaluating alternatives.