RF5L1214750CB4

RF5L1214750CB4

$159.66
  • Description:RF MOSFET LDMOS 50V D4E
  • Series:-

SKU:9caf092a222a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V D4E
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.2GHz ~ 1.4GHz
  • Gain:15dB
  • Voltage - Test:50 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:750W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:D4E
  • Supplier Device Package:D4E
  • Configuration:-

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RF5L1214750CB4

Overview

The RF5L1214750CB4 is a silicon-based RF power LDMOS transistor manufactured by STMicroelectronics. It delivers 750 W of output power with a drain-source voltage rating of 50 V. The device operates within the frequency range of 1200 to 1400 MHz. Designed for high-performance applications, it features internally matched pair transistors in a push-pull configuration. The component includes integrated ESD protection and offers large positive and negative gate-source voltage ranges to support improved Class C operation.

Feature Summary

  • Internally matched pair transistors in push-pull configuration
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation

Applications

  • Avionic applications

Procurement Notes

Verify the current production status before design finalization, as availability data indicates potential supply constraints or long lead times associated with this specific RF power component. Confirm RoHS compliance details through official documentation. Ensure that ordering suffixes do not alter functional specifications unless explicitly stated in the manufacturer's datasheet. Cross-reference the Mouser part number 511-RF5L1214750CB4 with the original manufacturer document to validate technical parameters.

Selection Notes

Select this component for avionic systems requiring 750 W output power between 1200 and 1400 MHz. The internal matching network simplifies circuit design by reducing external passive components. Consider the thermal stability and low HCI drift characteristics for reliable long-term operation. Verify that the system can accommodate the required gate-source voltage range for optimal Class C performance.

Part Context

This device belongs to the STMicroelectronics RF MOSFET Transistors category, specifically under RF Power MOSFETs. It utilizes Silicon technology and is classified as an N-Channel type. The product falls under the broader semiconductor portfolio of discrete transistors designed for radio frequency power amplification tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult the official STMicroelectronics datasheet for recommended alternatives or family members with similar electrical characteristics.

RF5L1214750CB4RF5L1214750CB4
$159.66
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