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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RFD14LN05SM is an N-channel power MOSFET manufactured using the MegaFET process. It features a 50V drain-source breakdown voltage and a continuous drain current of 14A. The device has a maximum on-resistance of 100 milliohms at a gate-source voltage of 10V. It operates within a temperature range of -55°C to +175°C and utilizes a TO-252AA surface-mount package.
Feature Summary
- Logic-level gate drive capability allows direct interfacing with standard CMOS, NMOS, and TTL logic circuits without additional level shifting components.
- MegaFET silicon processing technology ensures high channel density and low thermal resistance for efficient power handling.
Applications
- Switching regulators
- DC-DC switching converters
- Motor driver circuits
- Relay driver applications
Procurement Notes
Verify the specific manufacturer origin, as Fairchild Semiconductor operations were acquired by ON Semiconductor. Confirm that the component datasheet aligns with the legacy Fairchild specifications rather than updated ON Semiconductor revisions. Ensure the TO-252AA package marking matches the required design documentation before finalizing procurement orders.
Selection Notes
Select this component when a 50V rating and 14A continuous current are required in a compact surface-mount form factor. The logic-level threshold makes it suitable for microcontroller-controlled loads. Verify that the 100 milliohm on-resistance meets the thermal dissipation requirements for the intended duty cycle and ambient operating conditions.
Part Context
This part belongs to the RFD series of N-channel power MOSFETs designed for general-purpose power switching. The 'L' suffix typically denotes logic-level gate drive characteristics, while 'SM' indicates the surface-mount TO-252AA packaging variant used for automated assembly processes.
Replacement Considerations
RFD14N05LSM9A
FAQ
What is the maximum junction temperature for the RFD14LN05SM?
The maximum operating junction temperature is +175°C.
Can this MOSFET be driven directly by a 5V logic signal?
Yes, the special gate oxide design provides full rated conductance at gate biases in the 3V to 5V range, facilitating direct control from 5V integrated circuits.
