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Product Detailed Parameters
- Description：MOSFET N-CH 100V 40A
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RFIS40N10LE is a single N-Channel power MOSFET manufactured by Harris Corporation. It features a 100V drain-source breakdown voltage and supports a continuous drain current of 40A. The device exhibits a maximum on-resistance of 40mΩ at standard test conditions. It operates within an extended temperature range from -55°C to +175°C junction temperature. The component utilizes a D2PAK-3 (TO-263-3) surface-mount package for efficient thermal dissipation, with a rated power dissipation of 150W.
Feature Summary
- Utilizes enhanced mode operation for reliable switching control
- Designed for high-temperature environments up to 175°C
- Optimized silicon structure for low conduction losses
Applications
- Switching regulators
- Motor drivers
- Relay drivers
Procurement Notes
Verify the manufacturer status carefully as Harris Corporation's semiconductor division was acquired by ON Semiconductor. Confirm if the specific part number corresponds to legacy Harris documentation or current ON Semiconductor equivalents. Ensure the RoHS compliance status matches your project requirements, as older Harris parts may not meet modern environmental standards.
Selection Notes
Select this component when a robust N-Channel MOSFET with 100V capability and 40A current handling is required in a TO-263 package. Consider the 40mΩ on-resistance for efficiency calculations in power conversion circuits. Verify that the gate drive voltage aligns with the logic-level characteristics typical of this MegaFET process technology.
Part Context
This component belongs to the class of power field-effect transistors designed for general-purpose power switching applications. It represents the legacy product line from Harris Semiconductor before its acquisition. The device architecture focuses on maximizing silicon utilization to achieve high performance in a compact surface-mount footprint suitable for industrial and consumer electronics.
Replacement Considerations
Check for direct cross-reference data sheets from ON Semiconductor, which acquired Harris Semiconductor. Verify pinout compatibility and thermal resistance values against potential successor models like the RFP40N10 series to ensure functional equivalence in existing designs.
