RFIS70N06SM

$1.19

Description：MOSFET N-CH 60V 70A
Series：*

SKU:a4230ddca78a Category: FET, MOSFET Arrays Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 70A
Series：*
Mfr：Harris Corporation
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RFIS70N06SM

Overview

The RFIS70N06SM is a power field-effect transistor manufactured by Harris Corporation. It is an N-channel silicon metal-oxide semiconductor FET housed in a TO-263AB package. The device features a minimum drain-source breakdown voltage of 60V and supports a maximum continuous drain current of 70A. Its maximum on-resistance is specified at 0.014 ohms, with an avalanche energy rating of 19 mJ.

Feature Summary

Logic level compatible gate drive architecture
Single element configuration with integrated body diode
Enhancement mode operation for efficient switching

Applications

High-current DC-DC converter circuits
Motor control systems requiring low on-resistance
Power supply output stages

Procurement Notes

Verify the manufacturer designation as Harris Corporation against current corporate records, noting historical acquisitions. Confirm the specific suffix 'S' indicates the correct package variant and pinout compatibility for your PCB footprint. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards, as older Harris parts may not.

Selection Notes

Select this component when a 60V rating and high current capacity near 70A are required. The low on-resistance minimizes conduction losses in power paths. Verify that the thermal management solution can handle the dissipation associated with the specified current levels in the TO-263AB package.

Part Context

This part belongs to the RF1S series of power MOSFETs from Harris Corporation. The series covers various voltage and current ratings within the TO-263AB form factor. This specific model targets applications needing robust performance at 60V with minimal resistive loss.