RFM04U6P(TE12L,F)

Overview

The RFM04U6P(TE12L,F) is an N-channel Radio-Frequency Power MOSFET manufactured by Toshiba Semiconductor and Storage. It operates with a drain-source breakdown voltage of 20 V and supports a continuous drain current of 4 A. The device delivers 12 W of output power at a working frequency of 520 MHz, achieving a gain of 10.8 dB. It utilizes a PW-X-4 surface-mount package with a maximum power dissipation of 20 W. Key electrical characteristics include a gate-source threshold voltage of 1 V and a maximum gate-source voltage of +10 V.

Feature Summary

• Designed for radio-frequency power amplification applications
• Utilizes silicon technology for robust performance
• Features a compact surface-mount package for efficient board integration

Applications

• RF power amplification circuits
• Radio frequency communication systems
• Signal processing equipment requiring high-frequency operation

Procurement Notes

Verify the specific ordering suffix TE12L,F to ensure correct packaging configuration. Confirm RoHS compliance status through official documentation before procurement. Cross-reference the manufacturer part number with distributor listings to validate authenticity. Ensure storage conditions align with semiconductor handling standards to prevent damage prior to assembly.

Selection Notes

Select this component when a 20 V breakdown voltage and 4 A continuous current capability are required for RF applications. Verify that the 520 MHz operating frequency and 10.8 dB gain meet system specifications. Ensure the design accommodates the 20 W power dissipation limit within the PW-X-4 package constraints. Check compatibility with the +10 V maximum gate-source voltage rating for drive circuitry.

Part Context

This part belongs to the RFM12 series of RF Power MOSFETs from Toshiba. The series focuses on silicon-based transistors optimized for radio-frequency power applications. The TE12L,F suffix indicates specific tape-and-reel packaging for automated surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba Semiconductor and Storage technical support for verified cross-reference options or equivalent devices meeting identical RF power specifications.