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The RGCL80TS60GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for inverter applications. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 40A at 100°C. The device utilizes a TO-247GE package with a typical collector-emitter saturation voltage of 1.65V. It incorporates a built-in fast recovery diode and supports a short-circuit withstand time of 5µs. The component operates within a junction temperature range of -55°C to 175°C and complies with RoHS standards using lead-free plating.
Verify the exact part number against official ROHM documentation, as the provided reference data primarily lists the RGCL80TS60D variant. Confirm that the GC13 suffix corresponds to the specific tube packaging configuration and lead finish requirements for your assembly process. Ensure compatibility with the TO-247GE footprint during procurement planning.
Select this component for designs requiring robust short-circuit protection and integrated body diode performance. The 600V rating suits medium-voltage AC/DC conversion systems. Evaluate thermal management needs based on the 234W power dissipation rating and ensure gate drive voltages remain within the specified limits for optimal switching characteristics.
This IGBT belongs to ROHM's TS series, characterized by trench gate technology and field stop structures. The 'CL' designation typically indicates a low VCE(sat) variant optimized for efficiency. The TO-247GE package provides high thermal conductivity and mechanical stability for through-hole mounting in power electronics modules.
The RGT80TS65D is listed as a non-recommended substitute for new designs. Verify electrical parameter alignment, particularly the increased 650V rating and potential differences in switching speed or saturation voltage before considering any alternative components.