RGE80TS65DGC13

$6.37

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-

SKU:ff282231e549 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：5S SHORT-CIRCUIT TOLERANCE, 650V
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：63 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 40A
Power - Max：200 W
Switching Energy：1.09mJ (on), 780µJ (off)
Input Type：Standard
Gate Charge：85 nC
Td (on/off) @ 25°C：49ns/131ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：183 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247GE
Grade：-
Qualification：-

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RGE80TS65DGC13

Overview

The RGE80TS65DGC13 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247GE through-hole package. The device features a collector-emitter voltage rating of 650V and a continuous collector current capacity of 40A at 100°C, with a maximum rating of 63A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V, a typical reverse recovery time of 55ns for the built-in diode, and a minimum short-circuit withstand time of 5µs. Power dissipation is rated at 200W, with an operating temperature range from -40°C to +175°C.

Feature Summary

Incorporates Field Stop Trench IGBT technology for high-efficiency power switching applications.
Features a built-in fast and soft recovery Freewheeling Diode (FRD) to support inverter circuits.
Provides a 5µs short-circuit withstand capability to enhance system robustness against fault conditions.

Applications

Inverter circuits for motor drives
High-efficiency power supply systems
Industrial power conversion equipment

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific suffix GC13 matches the required packaging configuration. Ensure design compliance with thermal management requirements given the 200W power dissipation rating. Check for any end-of-life notifications or recommended replacement parts if the component is no longer recommended for new designs.

Selection Notes

Select this component for applications requiring 650V blocking capability and moderate current handling up to 40A. The integrated FRD simplifies circuit design by eliminating the need for external parallel diodes. Consider the TO-247GE package for efficient heat sinking in through-hole implementations. Evaluate the 5µs short-circuit tolerance against potential fault scenarios in the target application environment.

Part Context

This part belongs to ROHM's trench field-stop IGBT series, designed for high-frequency and high-efficiency power electronics. The 'T' designation typically indicates suitability for inverter applications with specific short-circuit ratings. It serves as a discrete power switch solution within larger power modules or standalone converter topologies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM catalogs for direct replacements or updated series components if this part is discontinued.