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The RGS00TS65EHRC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing trench field-stop technology in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 50 A at 100°C. The device includes a built-in fast recovery diode (FRD) with a typical reverse recovery time of 91 ns. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65 V and a short-circuit withstand time of 8 µs minimum. Power dissipation reaches 326 W, with an operating temperature range from -55°C to 175°C storage and -40°C to 175°C junction.
Verify the specific suffix C11 against the official datasheet to confirm tube packaging and lead plating specifications. Ensure the order matches the exact part number to avoid confusion with non-automotive variants or different packaging options within the same series. Confirm RoHS compliance status directly with the manufacturer documentation prior to procurement.
Select this component when designing automotive power stages requiring AEC-Q101 qualification. The 8 µs short-circuit tolerance supports robust protection schemes in inverter applications. Compare the 1.65 V Vce(sat) against alternative devices to evaluate thermal management requirements for electric compressor or heater modules.
This device belongs to the RGS series of trench field-stop IGBTs designed specifically for automotive applications. It complements other ROHM parts like the RGW and RGA series by offering optimized characteristics for electric compressor inverters and heating systems. The series emphasizes low conduction losses alongside high reliability under harsh automotive operating conditions.
Direct substitutes are not explicitly listed in the provided data. Consider checking the broader RGS series for variations in current rating or voltage class that may fit similar mechanical constraints.