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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 34A TO-263L
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：360µJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：22 nC
- Td (on/off) @ 25°C：21ns/93ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263L
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The RGS30NL65HRBTL is a silicon carbide (SiC) MOSFET manufactured by Rohm Semiconductor, designed for high-efficiency power conversion applications. This device features a 650V breakdown voltage and a continuous drain current rating of 30A at 25°C case temperature. It utilizes a trench gate field-stop structure to minimize switching losses and conduction losses compared to conventional planar SiC devices. The component is housed in a TO-247-3L package, providing robust thermal performance and mechanical stability for industrial and automotive environments.
Feature Summary
- Utilizes a trench gate field-stop structure for enhanced switching efficiency and reduced loss
- Optimized for high-frequency operation with low gate charge characteristics
- Designed for high thermal reliability in demanding power electronics applications
Applications
- On-board chargers for electric vehicles
- DC-DC converters in hybrid electric vehicles
- Industrial motor drives and inverters
- High-efficiency AC/DC power supplies
Procurement Notes
Verify the specific ordering code suffix against the official Rohm Semiconductor datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part matches the exact electrical parameters and package type required for your design. Cross-reference the manufacturer's latest documentation to avoid obsolete or superseded revisions.
Selection Notes
Select this component based on its 650V voltage rating and 30A current capacity suitable for medium-power SiC applications. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heat sinking for the target operating conditions. Consider the gate threshold voltage and total gate charge when designing the driver circuitry for optimal switching performance.
Part Context
This model belongs to Rohm's RGS series of Silicon Carbide MOSFETs, which are engineered for next-generation power systems. The series emphasizes low on-resistance and fast switching capabilities, addressing the growing demand for compact and efficient power solutions in automotive and industrial sectors.
Replacement Considerations
Direct replacements must match the 650V/30A specification and TO-247-3L package. Verify pinout compatibility and thermal characteristics before substitution. Consult Rohm's official replacement guide for validated equivalent parts within the same product family.
